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| 2SK1304 Silicon N-Channel MOS FET Application High speed power switching Features * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source * Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1304 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 100 20 40 160 40 100 150 -55 to +150 Unit V V A A A W C C 2 2SK1304 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 100 20 -- -- 1.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 22 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.025 0.03 35 3500 1400 340 25 170 730 300 1.2 300 Max -- -- 10 250 2.0 0.03 0.04 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 40 A, VGS = 0 I F = 40 A, VGS = 0, diF/dt = 50 A/s I D = 20 A, VGS = 10 V, RL = 1.5 Test conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 80 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 20 A, VGS = 10 V *1 I D = 20 A, VGS = 4 V *1 I D = 20 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on) 3 2SK1304 Power vs. Temperature Derating 120 Channel Dissipation Pch (W) 500 200 Drain Current ID (A) 100 50 D Maximum Safe Operation Area Operation in this Area is Limited by RDS (on) 80 10 C 10 PW O pe 0 1 20 10 5 2 1.0 0.5 = m s s ra 10 n s m (T tio s (1 = 40 C Sh 25 ot ) Ta = 25C C ) 0 50 100 Case Temperature TC (C) 150 1 3 30 10 100 300 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 100 10 V 5V 7V 80 Drain Current ID (A) Drain Current ID (A) 4V 40 50 Pulse Test Typical Transfer Characteristics VDS = 10 V Pulse Test 60 3.5 V 40 3V 20 VGS = 2.5 V 30 20 75C 10 TC = 25C -25C 0 8 4 12 16 Drain to Source Voltage VDS (V) 20 0 1 3 4 2 Gate to Source Voltage VGS (V) 5 4 2SK1304 Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 2.0 Pulse Test 50 A 1.2 Static Drain to Source on State Resistance vs. Drain Current Static Drain to Source on State Resistance RDS (on) () 0.5 Pulse Test 0.2 0.1 0.05 VGS = 4 V 10 V 0.02 0.01 0.005 2 5 10 20 50 100 Drain Current ID (A) 200 1.6 0.8 20 A 0.4 ID = 10 A 0 4 2 6 8 Gate to Source Voltage VGS (V) 10 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () Forward Transfer Admittance yfs (S) 0.10 Pulse Test ID = 50 A 0.06 VGS = 4 V 20 A 10 A 0.04 50 A 20 A 10 A VGS = 10 V 50 Forward Transfer Admittance vs. Drain Current 0.08 20 10 5 -25C TC = 25C 75C 2 1.0 0.02 VGS = 10 V Pulse Test 0 -40 0 80 120 40 Case Temperature TC (C) 160 0.5 1.0 2 5 10 20 Drain Current ID (A) 50 5 2SK1304 Body to Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) 200 100 50 20 10 5 0.5 10 2 1.0 10 20 5 Reverse Drain Current IDR (A) 50 0 10 30 40 20 Drain to Source Voltage VDS (V) 50 di/dt = 50 A/s, Ta = 25C VGS = 0 Pulse Test 10,000 Ciss Capacitance C (pF) Typical Capacitance vs. Drain to Source Voltage 1,000 Coss Crss 100 VGS = 0 f = 1 MHz Dynamic Input Characteristics 100 Drain to Source Voltage VDS (V) VDS VDD = 25 V 50 V 80 V 60 VDD = 80 V 50 V 25 V 20 ID = 40 A 4 VGS 12 20 Gate to Source Voltage VGS (V) 1,000 Switching Characteristics td (off) 500 Switching Time t (ns) tf 200 100 50 td (on) 20 10 0.5 VGS = 10 V VDD = 30 V PW = 2 s, duty < 1% * * 80 16 tr 40 8 0 0 40 120 160 80 Gate Charge Qg (nc) 200 1.0 10 2 5 20 Drain Current ID (A) 50 6 2SK1304 Reverse Drain Current vs. Source to Drain Voltage 50 Reverse Drain Current IDR (A) Pulse Test 40 30 10 V 5V 20 10 VGS = 0, -5 V 0 0.4 1.2 1.6 0.8 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25C 1.0 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.02 0.01 ch-c (t) = S (t) * ch-c ch-c = 1.25C/W, TC = 25C PDM PW 1 D = PW T 0.03 1 0.01 10 lse t Pu Sho T 100 1m 10 m Pulse Width PW (s) 100 m 10 Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL Vin Vout 50 Vin = 10 V . VDD = 30 V . td (on) 90 % tr 90 % td (off) tf 10 % 10 % 10 % Wavewforms 90 % 7 Unit: mm 5.0 0.3 15.6 0.3 1.0 3.2 0.2 4.8 0.2 1.5 0.5 14.9 0.2 19.9 0.2 1.6 1.4 Max 2.0 2.8 18.0 0.5 1.0 0.2 2.0 0.6 0.2 3.6 0.9 1.0 5.45 0.5 5.45 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P -- Conforms 5.0 g 0.3 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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